september 1992 l-band avionics applications rf & microwave transistors .400 x .400 2lfl (s036) hermetically sealed . refractory/gold metallization . emitter site ballasted . 10:1 vswr capability . low thermal resistance . input/output matching . overlay geometry . metal/ceramic hermetic package . p out = 75 w min. with 9.2 db gain description the AM1011-075 device is a high power class c transistor specifically designed for l-band avionics transponder/interrogator pulsed output and driver applications. this device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 10:1 output vswr at rated rf conditions. low rf thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. the AM1011-075 is supplied in the ampac? her- metic metal/ceramic package with internal input/output matching structures. pin connection branding 1011-75 order code AM1011-075 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* (t c 100?c) 175 w i c device current* 5.4 a v cc collector-supply voltage* 55 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 0.86 c/w *applies only to rated rf amplifier operation AM1011-075 1. collector 3. emitter 2. base 4. base thermal data 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1090mhz p in = 9w peak v cc = 50v 75 84 w h cf = 1090mhz p in = 9w peak v cc = 50v 48 56 % g p f = 1090mhz p in = 9w peak v cc = 50v 9.2 9.7 db note: pulse width = 32 m sec duty cycle = 2% static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 65 v bv ebo i e = 4ma i c = 0ma 3.5 v bv cer ic = 20ma r be = 10 w 65 v i ces v ce = 50v 6 ma h fe v ce = 5v i c = 1ma 10 dynamic typical performance 20 30 40 50 60 70 80 90 100 110 120 40 45 50 55 60 65 70 75 80 45678910111213141516 typical power output & collector efficiency vs power input p o w e r o u t p u t w a t t s power input (watts) c o l l e c t o r e f f . % power input (watts) h c p out typical power output & collector efficiency vs power input AM1011-075 2/4
test circuit all dimensions are in inches. substrate material: .025 thick ai 2 o 3 c1 : 0.88.0 pf johanson gigatrim capacitor c2 : 100 pf chip capacitor c3 : 1500 pf filtercon feedthru c4 : 1 m f, ceramic capacitor c5 : 100 m f, electrolytic capacitor rfc 1 : au plated ni strap 0.280 long x 0.035 wide x 0.005 thick rfc 2 : #26 wire, 4 turn 1/16 i.d. typical input impedance typical collector load impedance p in = 9.0 w v cc = 50 v normalized to 50 ohms z cl l h z in h l impedance data z in z cl freq. z in ( w )z cl ( w ) l = 1030 mhz 7.0 + j 3.0 12.5 - j 4.5 h = 1090 mhz 11.0 + j 1.5 13.0 - j 3.0 AM1011-075 3/4
package mechanical data information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a AM1011-075 4/4
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